Thin-Film Based Microtransformer Suitable for High Switching Frequency Power Applications

In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.