APEC Signals Emerging Trends: A focus on advancements in GaN integration, SiC devices, high step-down converters, and passives

Continuing to bring the latest advances in power semiconductors, circuit architectures, passives, and packaging, this year's IEEE Applied Power Electronics Conference and Exposition (APEC) in Long Beach, California, signaled emerging trends in gallium nitride (GaN) integration, silicon carbide (SiC) devices, high step-down dc-dc converters, and circuit components. While the plenary session talks highlighted trends in GaN-based power integrated circuits (ICs) and very-high-frequency (VHF) power conversion and magnetics, the exhibit floor demonstrated advances in SiC discretes and modules, including silicon-based power devices, passive components, and dc-dc power conversion solutions.