High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer

The «Through Silicon Vias» technology, developed for silicon interposer interconnects network, has inspired new capacitors components named «Through Silicon Capacitors (TSC)». Two architectures of TSC are studied in this paper: the Single Sided-TSC architecture where the TSC bodies are connected in parallel by the BEOL metal layers M1 and M2 and the Double Sided-TSC architecture where the TSC bodies are connected in parallel by using the front side and the back side of the silicon interposer. Modeling methods based on a segmented approach are presented for each architecture. Measurements on a large frequency range (100 Hz–40 GHz) are performed on prototypes of the SS-TSC architecture and the results allow to validate the corresponding modeling method. Next, a comparative study of those two architectures is performed, based on several criteria such as parasitic inductive and resistive components, resonance frequency.