Local electronic properties of the surface of the nanostructured silicon layers

Local energy characteristics of nanostructured silicon surface were studied by the tunneling spectroscopy method. Obtained current-voltage characteristics of nanostructured silicon layers, depending on the parameters of the formation of nanostructured silicon, without and under the illumination by ultraviolet radiation on air and in gas environment. Thus there is a different degree of filling of the valence band and the conduction band, a significant difference in the bandgap and the appearance on the curve of tunneling conductance of new peaks in gas environment. The results indicate that the method of scanning tunneling spectroscopy can be used in the field of surface chemistry, nanoelectronics and sensors.