Determination of AlGaN/GaN power transistor junction temperature for radar applications

AlGaN/GaN technology provides a lot of power density, which causes a thermal effect and degrades the whole electronic characteristics of the component. The local heating source appears when the component is biased. Moreover, radar applications work in pulsed rate and emphasize the impact of this source. So it is important to measure the temperature in transient mode, close to this local source as reliable as possible In this paper we present a review of the more reliable methods for time-resolving the thermal characterization of semiconductor devices for radar applications.