Test and measurement complex for investigation of GaN based high-brightness light-emitting diodes

Test and measurement complex was developed for investigation of degradation process of GaN based light-emitting diode optical and electric characteristics on the basis of the existing measurement complex LED IV Analyzer. Technical data of the developed test and measurement complex were presented, and measurement results of reverse volt-ampere characteristics were shown for light-emitting diodes of low and medium power in the range of micro- and nano-current before and after test under increased operational current. Also measurement results of brightness as function of the diode test time were shown along with evaluation of failure rate acceleration factor for determination of the light-emitting diode service life under specific operation conditions.