A solvent free method for post pad etch wafer cleaning

In semiconductor manufacturing, cleaning post pad etch opening is challenging due to the nature and thickness of films being etched. It is desirable to have a bond pad opening process that leaves a clean surface free from contaminants to allow good contact to external circuitry. A novel post pad etch opening resist strip and wafer cleaning process that removes all post etch residue has been developed using a plasma resist strip tool. We utilized a three step plasma process, followed by a deionized-water-only (DI) rinse. The process is designed to remove all the photoresist and transform the etch byproducts into water soluble compounds. This permits the elimination of the use of costly and toxic wet chemicals. The DI rinse is assisted with wafer spinning and jet spray to enhance the removal of fluorinated polymers from the sidewall and to remove polymer and particles from the pad and passivation surfaces.