Microwave characteristics of BARITT diodes based on silicon carbide

Microwave characteristics of barrier-injected (BARITT) diodes made of silicon carbide are investigated. It is shown that the negative resistance of p/sup +/-n-p/sup +/ structure made of different polytypes of SiC is an order of magnitude higher in absolute value in comparison with the Si p/sup +/-n-/sup +/ structure, all other factors being equal, even in the absence of trap levels (TLs). It is shown also that the dynamic negative resistance, in absolute value, the power output and efficiency increase with an increase of the concentration of traps. The effects of TLs in the band gap of the semiconductor on the impedance, power output, and efficiency of SiC BARITT diodes are examined,.