Experimental demonstration of performance improvement with a strain boost technique tailored for 3-Dimensional structure on nano-scaled bulk pFinFETs

We demonstrated a strain boost technique tailored for 3-Dimensional (3-D) structure on pFinFETs so the longitudinal stress can be locally maximized in the fin. The resulting effective mobility (μeff) improvement by this technique was effectively transferred to the enhancement of the injection velocity (Uinj). The saturation drain current (Idsat) and the ring oscillator speed under the same electrostatics were hence improved by 5% and 3% at Vdd=0.8V, respectively. Moreover, the electrical characteristics at the varied Vdd and temperatures, the fin number dependence, and the local variability were also systematically discussed in this paper.