Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications

This paper investigates the Ti thickness modulation based simple strategy to regulate the oxygen vacancy concentration in the HfO
_x
film and implemented to realize the resistive switching properties. Accordingly, we demonstrated a way to control the forming voltage, decrease the operation current to sub-μA level, controllable BRS/CRS and to bypass the self-CRS phenomena in Ti/HfO
_x
based 1T1R RRAM devices for future memory applications.