Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method

A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallow/ Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.