Dynamic characterization of the input and reverse transfer capacitances in power MOSFETs under high current conduction

This paper introduces a low-complexity, novel dynamic measurement technique to extract Ciss and Crss of a power MOSFET under high current conduction, providing an accurate description of the transistor dynamic characteristics while hard-switching an inductive load. The results of our dynamic measurements revealed larger capacitance values when compared to those extracted from conventional static measurements.