A high-efficient driving isolated Drive-by-Microwave half-bridge gate driver for a GaN inverter

A compact isolated Drive-by-Microwave (DBM) half-bridge gate driver is newly developed, which can drive GaN-GITs with its constant and low power consumption of 0.9 W even a high switching frequency up to 1.0 MHz due to the gate power time sharing by using the 2.4GHz microwave wireless power transmission. The fabricated GaN isolated DBM half-bridge gate driver provides enough output gate power for GaN-GIT's driving under 140 °C (Ta). Moreover, the fabricated isolated power source free GaN-GIT inverter module with the isolated DBM half-bridge gate drivers successfully demonstrated a 3-phase motor drive with high power conversion efficiency by covering from its low output.