A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories

We have reported a 4.6F/sup 2/ NOR cell with a gate length of 0.3 /spl mu/m. The lightly doped source (LDS) junction is adopted to extend the effective channel length. The word line and source line pitch are significantly decreased with the self-aligned contact processing and W-pad source interconnection. Moreover, the LDS NOR cell shows the improved retention capability and the reduced oxide trapping.