High performance pMOSFET with BF/sub 3/ plasma doped gate/source/drain and S/D extension

A BF/sub 3/ Plasma doping (PLAD) process has been utilized in source/drain/gate and shallow S/D extension for high performance 0.18 /spl mu/m pMOSFET. Gate oxide reliability, drain current, and transconductance of the pMOSFET with BF/sub 3/ PLAD are remarkably improved compared to those of BF/sub 2/ ion implanted devices. Cobalt salicide formation is also compatible with the plasma doped S/D junction.