Predictive simulation of transient activation processes in boron-doped silicon structures

A physically-based continuum diffusion/clustering model has been applied to the simulation of transient activation/reactivation of ion implanted boron. This work is aimed at the optimization and development of post-implant thermal cycles for minimal dopant diffusion with peak activation. This model has been successfully applied to the simulation of several new structures exhibiting partial deactivation of the implanted boron.