The characteristics of EPI-SI thin film in electron cyclotron resonance plasma examined by an integrated plasma diagnostic sub-system

In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with respect to hydrogen dilution ratio of H
₂
/SiH
₄
was also discussed. Three growth mechanisms were proposed to explain the effect on the crystallization of epi-si thin films based on adding hydrogen atoms to help the crystallization.