An ultra-low resistance and thermally stable W/pn-poly-Si gate CMOS technology using Si/TiN buffer layer

Advanced tungsten/pn-poly-Si gate CMOS devices with ultra-low resistance of 1 /spl Omega///spl square/ have been demonstrated using Si/TiN buffer layer. Propagation delay time of inverter ring oscillator with this novel gate CMOS is greatly smaller than that with Co-salicide CMOS in wider channel width.