A novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs

We describe a novel p-i-n photodetector fabricated on separation by implanted oxygen (SIMOX) substrate using a fully-depleted CMOS/SIMOX process, which is suitable for CMOS optoelectronic integrated circuits (OEICs). The photodetector/SIMOX exhibits a low parasitic capacitance of 0.2 pF, a high responsivity of 0.4 A/W at 850 nm, and a high photoresponse for 1 GHz operation at a supply voltage of 2.0 V.