Characterization of body effect of Au-EGFET for KRAS gene detection

The sensing properties of Au-EGFET with body effect for DNA detection were first investigated in this study. The body effect means different substrate bias in CMOS circuit operation without common ground. With positive V
_BS
of 1V, more shift of I
_D
-V
_G
curve could be a good index of DNA hybridization and concentration. It could be explained be the electric field induced counter ion effect. This measured technique can be used to enhance the sensing signal and improve the limit of detection (LOD).