Short channel InGaSb-on-insulator FET: With and without junctions

In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.