A fast manufacturability aware Optical Proximity Correction (OPC) algorithm with adaptive wafer image estimation

Aggressive Optical Proximity Correction (OPC) has been widely adopted in optical lithography to preserve circuit performance for sub-20nm technology nodes. However, complex mask patterns are output resulting in lower mask manufacturability and large computational time. In this paper, we propose a fast OPC algorithm in which intensity estimation during OPC is improved for better pattern fidelity and in which post processing to effectively improve mask manufacturability with preserving acceptable pattern fidelity is executed.