Modeling techniques for graphene field-effect transistors

This paper presents a hybrid-π equivalent circuit extract method for graphene field-effect transistors up to 66GHz. Because the G-FET channel cannot be pinched off, the open and short structures are used to remove parasitic element of the pad. The intrinsic elements of the model parameters are extracted from measured S-parameters directly. The model is verified with experiments and simulations, and good agreements are observed. The model will provide some insights and guidance for the practical use of the GFETs and can be embedded in circuit simulation tools.