The analysis of oxide reliability data

Techniques for measuring gate oxide reliability, such as TDDB, voltage ramps, and current ramps, have existed for a long time, but many of these are applied qualitatively. We discuss here detailed aspects of analysis methods which can be applied to these techniques to make absolute reliability determinations. Along the way, we discuss important aspects such as failure rate based methodologies, band-bending corrections to measured gate voltages, active gate oxide area scaling, and quasi-static lifetime transformations.