Wafer-Scale Dies-Transfer Bonding Technology for Hybrid III/V-on-Silicon Photonic Integrated Circuit Application

In this paper, we review a variety of hybrid III/V-on-silicon integration platforms with focus on the optical coupling between III/V and silicon waveguides. Numerical simulations with regard to the coupling efficiency are conducted for various mode-overlapped and adiabatic-coupled structures for future design guideline. As a highlight, we show a novel wafer-scale dies-transfer bonding technology that features the merits of high bonding efficiency and process scalability for potential manufacturability of hybrid III/V-on-silicon photonic integrated circuit. Exemplary demonstration of up to 100 dies bonding to an 8-in processed silicon wafer is shown with ~80% bonding yield, according to the C-mode scanning acoustic microscope characterization. As a proof-of-concept, hybrid silicon mode-locked lasers using the bonded wafer are demonstrated.