Bridging the gap between TCAD and ECAD methodologies in deep sub-micron interconnect extraction and analysis

Dominance of interconnect parasitics in impacting functionality, performance and reliability in deep sub-micron (DSM) designs is a well known topic. Reduced metal pitches, process variations, new materials for metallization/dielectrics emphasizes an increased need for "accurate" technology modeling of interconnect. In the mean time, continued design integration, increased chip sizes and market pressures call for faster but "accurate" EDA methodologies and tools. This tutorial provides a complete perspective of the TCAD interconnect modeling issues and how these could be addressed in ECAD methodologies and tools.