A 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage Reference

Electromagnetic Interference (EMI) degrades the performance of voltage and current references, due to its finite Power Supply Rejection Ratio (PSRR). The design of a 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage Reference is herein presented. The Voltage Reference is designed based on the Zero Temperature Coefficient (ZTC) transistor point. The high-PSRR is obtained using zero-V
_T
transistors as active loads in the open and feedback loop of the circuit. The final circuit was designed in a 130 nm CMOS process and occupies around 0.014 mm
²
of silicon area while consuming just 1.15 μW. Postlayout simulations present a 206 mV of Voltage Reference with a Temperature Coefficient of 321 ppm/° C, for the temperature range from -55 to 125 ° C. An EMI source of 4 dBm (1 V
_pp
) injected in the power supply, according to the Direct Power Injection (DPI) standard, yield in a maximum DC Shift and Peak-to-Peak ripple of -0.17 % and 822 μV
_pp
, respectively.