Very accurate high-frequency noise spectral analysis of P-channel FET's

A bench-unit instrument to interface single FET devices to spectrum analyzers for noise investigation has been realized. It consists of an ultra low-noise amplifier which raises the noise of the device-under-test well above the intrinsic limits of the analyzers. It is estimated that the intrinsic contribution of the amplifier is 100 pV//spl radic/Hz in the frequency range 100 Hz to 10 MHz. Preliminary results lead to the possibility to analyze PMOSEET devices, belonging to a 0.8 /spl mu/m CMOS technology, for which a noise model is proposed.