Gated SiGe PIN diodes exposed to visible light spectrum and heavy-ion radiation

This paper studies gated PIN diodes designed at Centro Universitário da FEI and fabricated at Global Foundries in the GF0.13 technology, using SiGe substrate and four gate setups. The analysis is made through experimental measurements and numerical simulations of PIN diodes in dark condition, illuminated with visible light or exposed to heavy-ion radiation. Particle beam radiation present in hazard environments may cause circuit malfunctions due to interference in the device response. This paper conducts a brief, but depth study of how these variables impact the PIN diode performance, important to space and sensor applications.