Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs

In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B
⁺
implantation into NiSi
₂
with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.