High-performance 6-Axis MEMS inertial sensor based on Through-Silicon Via technology

In this paper, we present the first Fairchild 6-Axis MEMS inertial sensor, FIS-1100, which combines a 3-axis gyroscope and a 3-axis accelerometer in a single MEMS die. The MEMS device utilizes an industry first Through-Silicon Via (TSV) technology, with a thick single-crystal Silicon device layer bonded between a TSV layer and a cap layer under vacuum. Due to the 60μm thick device layer and high aspect ratio device etch, FIS-1100 achieves significantly higher sense signals and lower noise, better shock and stiction resistance.