A low power MEMS-ASIC silicon resonant accelerometor with sub-µg bias instability and ±30g full-scale

This paper demonstrates a silicon resonant accelerometer which consists of a MEMS structure and an ASIC readout circuit. The MEMS sensor is fabricated in an 80-µm thick SOI process with a wafer level vacuum package. For noise reduction, several techniques are employed during the circuit design. And in order to reduce the temperature drift due to self heating, the power consumption is carefully limited. Finally, the prototype with these two chips is implemented, and the testing results show it can achieve sub-µg bias instability and equation velocity random walk within ±30g full scale. Moreover, this prototype consumes 3.5mW under 1.5V single supply.