Analytical Modeling of Dual Material Gate All around Stack Architecture of Tunnel FET

An analytical model has been proposed to study the behavior of Dual Material Gate All Around Stack Architecture of TFET (DMGAASA TFET) in suppressing short channel effects. A comparative study of the Short Channel Effects for DMGAASA and Single material Gate All Around Stack Architecture of TFET (SMGAASA TFET) device structures has been carried out. DMGAASA TFET provides better results to prevent SCEs as compared to SMGAASA TFET. The analytical results obtained from the proposed model agree well with the simulated results obtained from TCAD sentaurus device simulator.