Abstract:
The demand of broadband amplifier has been boosted to meet the requirements of multi-mode and multi-band wireless applications. GaN HEMT is the next generation of RF powe...Show MoreMetadata
Abstract:
The demand of broadband amplifier has been boosted to meet the requirements of multi-mode and multi-band wireless applications. GaN HEMT is the next generation of RF power transistor technology. In this paper, we have designed a 10W UHF broadband class-AB Power Amplifier (PA) based on GaN HEMT. The proposed amplifier has been designed and developed in the frequency range from 200-500 MHz. A maximum drain efficiency of 71% is achieved.
Published in: 2016 13th International Bhurban Conference on Applied Sciences and Technology (IBCAST)
Date of Conference: 12-16 January 2016
Date Added to IEEE Xplore: 10 March 2016
ISBN Information:
Electronic ISSN: 2151-1411
Contents 