Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode. TCAD simulation indicates that the proposed IGBT offers an avalanche energy 32% and reverse-biased safe operating area 20% higher than a conventional field-stop IGBT. Therefore, the proposed IGBT provides more reliable electrical performance for high-power converters.