High performance polysilicon NEMS fabricated at low temperature with UV laser annealing

In this paper, we present for the first time poly-Silicon nanowire (poly-Si NW) based NEMS resonators fabricated at very low temperature (300°C max) and recrystallized with a 308nm excimer laser for low cost co-integrated mass sensors on CMOS. Poly-Si NEMS performances have been systematically compared to crystalline silicon (c-Si) NEMS and most important resonator's figure of merit have been extracted. Within an excellent fabrication yield, the stability measurements of poly-Si NEMS lead to a mass resolution detection in air down to 190 zg (×10-21g).