Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications

Suppression of substrate injection has been achieved by integration of a RESURF LDMOS device in a 20-30 V smart power technology. A successful use of the single n-implant for both depletion mode NMOS and RESURF LDMOS results in a dramatic increase in performance and functionality of this technology with virtually no extra process complexity.