25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS

We present a room-temperature near-field sensor with illumination, evanescent-field sensing, and detection on a single chip. It is operated differentially around 533 to 555GHz in 0.13μm SiGe HBT technology (f_t /f_max of 300/500GHz) and achieves a lateral resolution of 8μm with a high response of up to 21.7μA in a single solid-state surface device without applying any external optics. Here, the stopband characteristics of a differentially driven 3D split-ring resonator with high spatial confinement of evanescent surface-fields are exploited as an object-tunable transmission modulator inserted in-plane between a close-proximity source and a detector.