Planarization improvement using non-porous polishing pad in ILD CMP

CMP polishing pads play a critical role in obtaining highly consistent and reliable Chemical Mechanical Planarization (CMP) process results. Optimal planarization of the process layers is a critical objective for the fabrication process and is mainly enabled via Chemical-Mechanical Polishing (CMP) techniques. In order to get the golden planarization, to understand and collect different pad's polish data will be meaningful. Some chemical mechanical polishing pads and tested system and a method for using such different pad are described. For topography issue, we use “big data” to explain the polish variation between pad and pattern wafer. In this paper, an experimental approach with polish data will be suggested. The key study was to collect topography variation during pattern wafer polishing. At the same time, removal rate and polish profile and defect also were concerned. According to the experiment result and pad characteristic analysis, the optimum polish mode will be appeared easily. At the same time, the results also showed ILD CMP topography will be influenced by pad porosity, hardness and deflection.