A model for gated-lateral BJTs based on standard MOSFET models

The Pao-Sah MOSFET equation is modified so that it applies when the source-body junction is forward biased. The modified equation can be separated into two components: (1) a MOSFET charge-sheet term and (2) a bipolar transistor term. The role of the two components in the variable gain of gated-lateral bipolar transistors (GL-BJT) is discussed.