Model-based CMP (Chemical-Mechanical Polishing) proximity correction for mitigating systematic process variations

In this paper we have proposed a way of a model-based CMP proximity correction in sub-28nm SoC (system-on-a-chip) designs. Just like OPC (optical proximity correction) process against lithography variations, the proposed approach can be added at the mask synthesis stage in addition to the conventional metal fill approach and highly reduces the systematic process variation due to CMP.