Design of a Ka-band broadband SPDT switch MMIC based on GaN HEMTs

Based on GaN HEMTs, a Ka-band SPDT switch MMIC is designed and simulated in this paper. The circuit topology and characteristics of the GaN MMIC are designed and optimized. We employed computer simulation and adopted domestic epitaxial material and standard wafer fabrication process to achieve this design. The simulation results of this MMIC switch mentioned in this paper are shown as follow: the operating frequency range is 30–40GHz; the insertion loss is 1.861 dB; the isolation is 27.651 dB; the capability of power is higher than 7.94w; the switching time is less than 1 ns and the return loss is more than 18 dB, which lays the foundation for GaN T/R(Transmitter and Receiver) MMIC (Monolithic Microwave Integrated Circuit).