High-speed oxidation-confined 850nm VCSELs

We report on the design, fabrication and tested of high-speed, oxidation-confined 850nm VCSELs. We also compare the use of InGaAs and GaAs quantum wells(QWs) in the active region. The simulation test was showed both VCSELs of the QWs structure. The optimized InGaAs structure VCSELs can improve high-speed performance and opto-electronic characteristics. High-speed 850nm VCSELs have been fabricated of output power reached 11mW at room temperature, beam divergence semi-angle closed to 8.5° and modulation rates was 2.5Gbit/s.