Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach

In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase in the number of junction (24.4–43.56% for single-six junction solar cells) while considering no dislocation. Whereas it is found that the efficiency is affected when dislocation density (1001−1013m−2) is incorporated for analyzing the performances of either single junction (24.47-8.25%) or multi junction solar cell (43.56-15.25% for six junctions). The effect of dislocation density on minority carrier life time is also been anticipated in this study.