Large signal performance of Graphene-FET considering contact resistance

Effect of source/drain contact resistance on the DC characteristics of large area Graphene Field Effect Transistor (GFET) is reported here. As graphene has been identified as a potential candidate for replacing silicon based devices, their performance has been thoroughly investigated. In practical devices, the contact resistance at the interface of channel and Source/Drain (S/D) contact is inevitable; therefore a compact model is proposed taking them into account. In the simulation, Ti, Au, Pt and Ni are considered as contact metals. The result shows the DC characteristics of GFET greatly depends on the contact resistance. Drain current reduces with increasing contact resistance and saturation in the current voltage characteristics disappears at high value of the contact resistance.