A 1.1 µA voltage reference circuit with high PSRR and temperature compensation

This paper presents a low-power and a low output voltage CMOS Bandgap Reference Generator topology with high PSRR and a novel temperature curvature compensation method. The proposed design was implemented in a standard 0.13 μm CMOS process. The main circuit is based in an opamp based β-multiplier bandgap circuit with resistive division. The compensation method cancels out up to 2nd order non-linear terms of the BJT voltage by using the MOSFET leakage current effect. The performance of the circuit was verified by post-layout simulations. Simulated results have shown temperature coefficients as low as -4.4 ppm/°C over a temperature range of 140°C (-40°C to 100°C). In addition the circuit demonstrated a PSSR of -100 dB at low frequencies and -73 dB at 1 MHz. The current consumption is 1.1 μA at 27°C.