Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs

This paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate.