Abstract:
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitati...Show MoreMetadata
Abstract:
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
Date of Conference: 02-04 November 2015
Date Added to IEEE Xplore: 04 January 2016
ISBN Information:
Rensselaer Polytechnic Institute, Troy, NY, U.S.A.
Contents Rensselaer Polytechnic Institute, Troy, NY, U.S.A.
