Efficiency optimization for a power factor correction (PFC) rectifier with gallium nitride transistor

In this contribution, a 1 kW one phase power factor correction (PFC) rectifier with a Gallium Nitride (GaN) transistor is optimized considering switching frequency in regard to the losses of the PFC inductor. A driver circuit with negative voltage at switch-off supplied from a unipolar voltage supply is proposed. A model of the PFC rectifier including conduction and switching losses of semiconductors, copper and core losses of inductor is developed and utilized to identify the best design by numeric optimization of switching frequency, number of turns and length of air gap. Simulation results show an efficiency of about 98.6% at full load with 230 V mains voltage.