Elimination of Single Event Latch-Up in the ATMEL ATMX150RHA Rad-Hard CMOS 150nm Cell-Based ASIC Family

This paper presents a dual-deep-wells process option to completely eliminate the Single Event Latch-up (SEL)of the ATMEL 150nm CMOS SOI technology. TCAD simulations were performed to investigate the efficiency of this process option versus the doping concentration. The experiments show that the combination of the buried oxide and dual-deep-wells is an effectiveness technique to eliminate the SEL effect.